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Transistor
2SD1205, 2SD1205A
Silicon NPN epitaxial planer type darlington
For low-frequency amplification
6.90.1
0.4
Unit: mm
2.50.1 1.0
1.0 2.40.2 2.00.2 3.50.1
s Features
q
1.5
1.5 R0.9 R0.9
q
0.85
0.550.1
0.450.05
1.250.05
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SD1205 2SD1205A 2SD1205 VCEO VEBO ICP IC PC Tj Tstg Symbol VCBO
(Ta=25C)
3 2 1
Ratings 30 60 25 50 5 750 500 400 150 -55 ~ +150
Unit V
1:Base 2:Collector 3:Emitter
2.5 2.5
emitter voltage 2SD1205A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
V V mA mA mW C C
EIAJ:SC-71 M Type Mold Package
Internal Connection
C B
200
E
s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Collector to base voltage Collector to emitter voltage 2SD1205 2SD1205A 2SD1205 2SD1205A
(Ta=25C)
Symbol ICBO IEBO VCBO VCEO VEBO hFE*1 VCE(sat) VBE(sat) fT Conditions VCB = 25V, IE = 0 VEB = 4V, IC = 0 IC = 100A, IE = 0 IC = 1mA, IB = 0 IE = 100A, IC = 0 VCE = 10V, IC = 500mA*2 IC = 500mA, IB = 0.5mA*2 IC = 500mA, IB = 0.5mA*2 VCB = 10V, IE = -50mA, f = 200MHz 150
*2
min
typ
max 100 100
4.10.2
q
Forward current transfer ratio hFE is designed high, which is appropriate to the driver circuit of motors and printer bammer: hFE = 4000 to 2000. A shunt resistor is omitted from the driver. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board.
1.00.1
R
0.
4.50.1
7
Unit nA nA V
30 60 25 50 5 4000 20000 2.5 3
V V
Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency
*1h
V V MHz
Pulse measurement
FE
Rank classification
Q R 4000 ~ 10000 8000 ~ 20000
Rank hFE
1
Transistor
PC -- Ta
Collector to emitter saturation voltage VCE(sat) (V)
500 100 30 10 3 25C 1 -25C 0.3 0.1 0.03 0.01 0.01 0.03 Ta=75C
2SD1205, 2SD1205A
VCE(sat) -- IC
Base to emitter saturation voltage VBE(sat) (V)
IC/IB=1000 100 30 10 3 Ta=-25C 1 0.3 0.1 0.03 0.01 0.01 0.03 75C 25C
VBE(sat) -- IC
IC/IB=1000
Collector power dissipation PC (mW)
400
300
200
100
0 0 20 40 60 80 100 120 140 160
0.1
0.3
1
3
10
0.1
0.3
1
3
10
Ambient temperature Ta (C)
Collector current IC (A)
Collector current IC (A)
hFE -- IC
105
Cob -- VCB
Collector output capacitance Cob (pF)
VCE=10V 8 7 6 5 4 3 2 1 0 IE=0 f=1MHz Ta=25C
Forward current transfer ratio hFE
Ta=75C 104 25C
-25C 103
102
10 0.01 0.03
0.1
0.3
1
3
10
1
3
10
30
100
Collector current IC (A)
Collector to base voltage VCB (V)
2
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(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. (3) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (4) The products and product specifications described in this material are subject to change without notice for reasons of modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, redundant design is recommended, so that such equipment may not violate relevant laws or regulations because of the function of our products. (6) When using products for which dry packing is required, observe the conditions (including shelf life and after-unpacking standby time) agreed upon when specification sheets are individually exchanged. (7) No part of this material may be reprinted or reproduced by any means without written permission from our company.
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A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconductor products best suited to their applications. Due to modification or other reasons, any information contained in this material, such as available product types, technical data, and so on, is subject to change without notice. Customers are advised to contact our semiconductor sales office and obtain the latest information before starting precise technical research and/or purchasing activities. B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always the possibility that further rectifications will be required in the future. Therefore, Panasonic will not assume any liability for any damages arising from any errors etc. that may appear in this material. C. These materials are solely intended for a customer's individual use. Therefore, without the prior written approval of Panasonic, any other use such as reproducing, selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited.
2001 MAR

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